Samsung Adopts Molybdenum in V-NAND: A Game-Changer for Flash Memory?

In April of this year, Samsung announced the commencement of mass production of its ninth-generation V-NAND flash memory. The initial production batch consists of 1Tb (128GB) TLC 3D NAND flash chips, which offer approximately 50% higher storage density per unit area compared to the previous generation, while also reducing power consumption by 10%. Samsung has also introduced new technologies to prevent cell interference and extend cell lifespan, significantly reducing the planar area of storage cells by eliminating spare channel holes.

According to The Elec, in the production of the ninth-generation V-NAND flash memory, Samsung has utilized tungsten in the metallization process and has also employed molybdenum (Mo). While the industry has reached the limits of using tungsten to reduce layer height, switching to molybdenum can further lower the layer height by 30% to 40% and also reduce NAND latency. Samsung’s decision to increase the use of molybdenum signifies potential changes in the value chain of NAND materials.

Unlike tungsten hexafluoride (WF6), the machinery must heat molybdenum-containing raw materials to 600°C to convert them from solid to gas. Industry insiders have revealed that Samsung has acquired five molybdenum deposition machines from Lam Research and plans to acquire twenty more units next year. Samsung is procuring molybdenum from Entegris and Air Liquide, with Merck also supplying samples to Samsung. Besides Samsung, SK Hynix, Micron, and Kioxia are also exploring the use of molybdenum in NAND production.

Compared to tungsten hexafluoride, these molybdenum-containing materials are priced ten times higher. Beyond NAND flash memory, molybdenum materials may also be used in DRAM and logic chips in the future. Several companies are targeting this new market by developing corresponding molybdenum materials, indicating an inevitable contraction in the tungsten hexafluoride market.